| PART |
Description |
Maker |
| MGW20N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP4N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP20N60U-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP7N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGS05N60D_D ON1885 MGS05N60D MGS05N60D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
IGBT 0.5 A @ 25 600 V
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| MTP5N40E |
N-Channel Enhancement-Mode Silicon Gate
|
New Jersey Semi-Conduct...
|
| MTP4N80E |
N-Channel Enhancement-Mode Silicon Gate
|
New Jersey Semi-Conductor P...
|
| MTP15N08EL |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE
|
Motorola, Inc.
|
| IRF820 IRF823 IRF821 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS
|
MOTOROLA INC
Motorola, Inc.
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| LX521 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
